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7 Jan 2009, 3:02 pm
[www.freepatentsonline.com]Nanosys has developed many designs of field effect transistors (FETs) using multiple semiconductor nanowires to form the channels. [read post]
9 Jun 2016, 2:20 pm by Simon Lester
Here are some articulations of the FET standard in the Mesa NAFTA Chapter 11 award: The claimant:  484. ... [read post]
1 Apr 2020, 12:04 pm by Marshall Fawley
The post FET: Another Victim of Coronavirus appeared first on Lehrman Beverage Law. [read post]
1 Apr 2020, 12:04 pm by Marshall Fawley
The post FET: Another Victim of Coronavirus appeared first on Lehrman Beverage Law. [read post]
24 Dec 2009, 5:12 pm by blaisemouttet
This latest variation is from IBM and includes the feature of nitride spacer material for a cylindrical gate nanotube FET. [read post]
15 Apr 2008, 2:47 pm
This patent from Agilent teaches a similar modification of AFM tips which uses a nanowire as the tip and functionalizing the nanowire so that it acts as a gate of a chem-FET. [read post]
14 Mar 2008, 6:36 am
  A final unanswered question is whether the IRS interpretation of the FET provisions of the Code is overbroad in treating the FET as a cascading tax. [read post]
26 Sep 2007, 3:13 pm
[www.freepatentsonline.com]Nantero obtains yet another patent on carbon nanotube electronics this time focused on using the carbon nanotubes as switching elements offset from FETs. [read post]
14 Jan 2014, 7:21 am
The Internal Revenue Service (IRS) announced inflation adjustments to the federal excise tax (FET) rates on air transportation for 2014. [read post]
31 Dec 2012, 8:02 am
The Internal Revenue Service (IRS) announced inflation adjustments to the federal excise tax (FET) rates on air transportation for 2013. [read post]
14 Aug 2023, 5:17 am by Jacob Katz Cogan
Through a systematic examination of the FET and the concept of the rule of law, the book argues that further interpretation and application of FET should proceed as a sequential review, focusing firstly on the broadly understood domestic legal framework. [read post]
6 Mar 2012, 11:45 am by blaisemouttet
A method for forming a nanowire field effect transistor (FET) device, the method comprising: forming a nanowire on a semiconductor substrate; forming a first gate structure on a first portion of the nanowire; forming a first protective spacer adjacent to sidewalls of the first gate structure and over portions of the nanowire extending from the first gate structure; removing exposed portions of the nanowire left unprotected by the first spacer; and epitaxially growing a doped semiconductor… [read post]
13 Jun 2007, 3:08 pm
[www.freepatentsonline.com]In vertical FETs the current flows through a vertical channel extending from a substrate in a direction perpendicular to the plane of the substrate. [read post]
10 Sep 2007, 2:22 pm
[www.freepatentsonline.com]Vertical nanochannel FETs are likely to be the next (last?) [read post]
25 Feb 2008, 2:17 pm
The basic patents for nanotube channel FETs belong to Infineon and this patent to Samsung teaches a configuration of a CNT memory cell. [read post]
19 Sep 2021, 6:43 am by Simon Lester
First, here are some key passages from the Tribunal majority's finding of violation of MST/FET: 805. [read post]
17 Sep 2010, 10:21 am by blaisemouttet
http://ip.com/patent/US7795677This patent from IBM teaches the latest variation of nanowire FETs based on silicon-on-insulator technology. [read post]
14 Aug 2021, 8:36 am by Badrinath Srinivasan
We also deal with the FET clause in the India-UAE BIT, 2013 and the Brazil India BIT, 2020Lecture 16: Fair & Equitable Treatment: Preliminary AspectsThis lecture deals with certain preliminary aspects of the FET standard, including its brief history and its nature and function.Lecture 17: More on Fair and Equitable StandardsThis lecture addresses issues such as whether FET standard is a part of customary international law relating to minimum standard of treatment and… [read post]